THE GROWTH OF HIGH-QUALITY INP/INGAAS/INGAASP INTERFACES BY CBE FOR SCH MULTI-QUANTUM-WELL LASERS

被引：3

作者：

SHERWIN, ME

NICHOLS, DT

MUNNS, GO

BHATTACHARYA, PK

HADDAD, GI

机构：

[1] Center for High Frequency Microelectronics Electrical Engineering and Computer Science Dept., The University of Michigan, Ann Arbor, 48109-2122, MI

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 12期

关键词：

CBE; INGAASP; MQW-SCH LASERS;

D O I：

10.1007/BF03030192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs have been grown by chemical beam epitaxy for use in multi-quantum well separate confinement heterostructure lasers. InGaAsP has been successfully grown for lambda = 1.1, 1.2 and 1.4-mu-m. The TMI and TEG incorporation coefficients have strong dependencies on substrate temperature and also charge as the InGaAsP composition tends towards InP. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence to minimize the measured photoluminescence FWHM. InGaAs quantum wells as narrow as 0.6 nm have been grown with 7K FWHM of 12.3 meV. Lattice matched MQW-SCH lasers were grown using different interface switching sequences with the best laser having a threshold current density of 792 A/cm2 for an 800 x 90-mu-m broad area device.

引用

页码：979 / 982

页数：4

共 10 条

[1] KINETIC-STUDY OF METALORGANIC MOLECULAR-BEAM EPITAXY OF GAP, INP, AND GAXIN1-XP [J].

GARCIA, JC ;

MAUREL, P ;

BOVE, P ;

HIRTZ, JP .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3297-3302

[2]

HEINECKE H, 1990, 6 INT MBE SAN DIEG

[3] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909

[4]

NAGAO S, 1990, 6 INT MBE SAN DIEG

[5] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

TEMKIN, H ;

SUMSKI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665

[6]

SHERWIN ME, UNPUB J ELECTRON MAT

[7]

SHERWIN ME, 1990, 6 INT MBE SAN DIEG

[8] LOW THRESHOLD AND HIGH-POWER OUTPUT 1.5-MU-M INGAAS INGAASP SEPARATE CONFINEMENT MULTIPLE QUANTUM-WELL LASER GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

WU, MC ;

TANBUNEK, T ;

LOGAN, RA ;

CHU, SNG ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2065-2067

[9] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SCHUBERT, EF .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :220-222

[10]

WOELK E, 1991, IN PRESS J CRYST GRO

← 1 →