SCHOTTKY CONTACTS ON N-IN0.53GA0.47AS WITH ENHANCED BARRIERS BY COUNTER-DOPED INTERFACIAL LAYERS

被引：5

作者：

KORDOS, P ^{[1
]}

MARSO, M ^{[1
]}

MEYER, R ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] SLOVAK ACAD SCI, INST ELECT ENGN, CS-84239 BRATISLAVA, CZECHOSLOVAKIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期

关键词：

D O I：

10.1109/16.144693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p+-InGaAs layers (zinc-doped, N(A) = 8 x 10(18) cm-3,d = 30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, J(R) = 5 X 10(-6) A /cm2, the ideality factor is near unity, n = 1.12, and effective barrier heights are 0.66-0.68 eV, i.e., higher than reported until now.

引用

页码：1970 / 1972

页数：3

共 10 条

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