SCHOTTKY-BARRIER HEIGHT ENHANCEMENT OF N-IN0.53GA0.47AS BY A NOVEL CHEMICAL PASSIVATION TECHNIQUE

被引：24

作者：

HWANG, KC ^{[1
]}

LI, SS ^{[1
]}

PARK, C ^{[1
]}

ANDERSON, TJ ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT CHEM ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.345138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method of enhancing Schottky barrier height, while reducing the surface-state density on n-type In0.53Ga0.47 As surfaces using P2S5/(NH4)2S and (NH 4)2Sx passivation is described in this communication. The current-voltage and capacitance-voltage characteristics show that passivated diodes have lower reverse leakage current and higher effective barrier height than that of the unpassivated diodes. The electrical characteristics of passivated diodes have not changed after one month of exposure to the air.

引用

页码：6571 / 6573

页数：3

共 14 条

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