HIGH-QUALITY IN0.53GA0.47AS SCHOTTKY DIODE FORMED BY GRADED SUPERLATTICE OF IN0.53GA0.47AS/IN0.52AL0.48AS

被引：18

作者：

LEE, DH ^{[1
]}

LI, SS ^{[1
]}

SAUER, NJ ^{[1
]}

CHANG, TY ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1863 / 1865

页数：3

共 13 条

[1] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
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WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 174 - 176
[2] PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES
CAPASSO, F
COX, HM
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OLSSON, NA
HUMMEL, SG
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1193 - 1195
[3] QUASI-SCHOTTKY BARRIER DIODE ON N-GA-0.47IN-0.53 AS USING A FULLY DEPLETED P+-GA-0.47IN-0.53 AS LAYER GROWN BY MOLECULAR-BEAM EPITAXY
CHEN, CY
CHO, AY
CHENG, KY
GARBINSKI, PA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 401 - 403
[4] CHEN CY, 1984, IEEE ELECTRON DEVICE, V6, P20
[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[6] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE
LEHENY, RF
NAHORY, RE
POLLACK, MA
BEEBE, ED
DEWINTER, JC
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 227 - 231
[7] COMPOSITION DEPENDENCE OF AU INXAL1-XAS SCHOTTKY-BARRIER HEIGHTS
LIN, CL
CHU, P
KELLNER, AL
WIEDER, HH
REZEK, EA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1593 - 1595
[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244
[9] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS
MORGAN, DV
FREY, J
[J]. ELECTRONICS LETTERS, 1978, 14 (23) : 737 - 738
[10] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP
OLEGO, D
CHANG, TY
SILBERG, E
CARIDI, EA
PINCZUK, A
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 476 - 478

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