EFFECTS OF SIH2CL2 ON LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-200-DEGREES-C) SI EPITAXY BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引：9

作者：

OSHIMA, T ^{[1
]}

SANO, M ^{[1
]}

YAMADA, A ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECT & ELECTR ENGN, MEGURO KU, TOKYO 152, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷

关键词：

D O I：

10.1016/0169-4332(94)90412-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial Si films have been grown by the mercury sensitized photo-CVD method using a SiH4/H-2 gas mixture with and without SiH2Cl2 at a substrate temperature lower than 200-degrees-C. The effect of SiH2Cl2 on low-temperature Si epitaxy was investigated. The structural properties of the obtained films were characterized by reflection high-energy electron diffraction (RHEED), IR and Raman spectroscopy. It was found that the film quality was improved by the addition of SiH 2Cl2. The most probable role of SiH2Cl2 is etching of the growing surface, resulting in a rigid Si network.

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收藏

页码：215 / 219

页数：5

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