EFFECTS OF DEUTERIUM ON LOW-TEMPERATURE SI EPITAXY BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引：7

作者：

JIA, Y

YAMADA, A

KONAGAI, M

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 05期

关键词：

DEUTERIUM; PHOTOCHEMICAL VAPOR DEPOSITION; LOW-TEMPERATURE SILICON EPITAXY; HEAVY DOPING;

D O I：

10.1143/JJAP.30.893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Si films have been successfully grown by the photochemical vapor deposition process using the mixture of SiH4, SiH2F2 and D2 gases at temperatures from 200 to 475-degrees-C. Using H-2 as diluting gas, the epitaxial Si films were obtained at temperatures from 200 to 350-degrees-C. However, the upper limit of the growth temperature was raised about 100-degrees-C (from 350 to 475-degrees-C) by substituting D2 for H-2 as the diluting gas. Surface morphology and crystallinity were also improved with D2. Furthermore, we carried out heavy phosphorous doping with D2 and obtained a film with an electron concentration of 1 x 10(21) cm-3.

引用

页码：893 / 896

页数：4

共 11 条

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