DEFECT EVALUATION OF HEAVILY P-DOPED SI EPITAXIAL-FILMS GROWN AT LOW-TEMPERATURE

被引:9
作者
JIA, Y [1 ]
OSHIMA, T [1 ]
YAMADA, A [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
TANIGAWA, S [1 ]
WEI, L [1 ]
机构
[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 5A期
关键词
HEAVY DOPING; PLASMA-CVD; DEFECT COMPLEX; POSITRON ANNIHILATION;
D O I
10.1143/JJAP.32.1884
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heavily P-doped epitaxial Si films with carrier concentration of 3 x 10(21) cm-3 have been successfully grown by plasma chemical vapor deposition using a gas mixture of SiH4, SiF4, H-2 and PH3 at a very low temperature of 250-degrees-C. From the annealing characteristics of heavily P-doped Si films, it was found that the electron concentration decreased once after annealing at 600-degrees-C but increased subsequently upon raising the annealing temperature. The possibility of the formation of a vacancy-type defect complex, typically (V-P4), a vacancy surrounded by four phosphorus atoms, was proposed to interpret this phenomenon. Furthermore, a positron annihilation experiment was employed to investigate this vacancy-type defect in Si films and good agreement was obtained between thermodynamical calculation based on the V-P4 model and the positron annihilation experiment.
引用
收藏
页码:1884 / 1888
页数:5
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