PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT

被引：38

作者：

ELLIOTT, SR

机构：

[1] Cavendish Laboratory, Cambridge, Madingley Road

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 04期

关键词：

D O I：

10.1080/13642817908246356

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dramatic photo-induced changes in the electrical properties of glow- discharge-deposited amorphous silicon observed recently by Staebler and Wronski (1977) are discussed in the light of a model recently proposed by the author for defect states in this material. It is assumed that self-trapped excitons in the form of close pairs of oppositely charged defect centres are produced after irradiation with band-gap light. The Fermi level position is then moved nearer the mid-gap, accounting for the metastable decrease in d.c. conductivity, provided the samples are not heavily doped. © 1979 Taylor & Francis Ltd.

引用

页码：349 / 356

页数：8

共 29 条

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