EFFECTS OF SUBSTRATE MISORIENTATION ON DOPING CHARACTERISTICS AND BAND-GAP ENERGY FOR INGAALP CRYSTALS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：42

作者：

SUZUKI, M

NISHIKAWA, Y

ISHIKAWA, M

KOKUBUN, Y

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 113卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(91)90017-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of substrate misorientation on Zn and Si doping characteristics and band gap energy have been investigated for InGaAlP grown by low-pressure metalorganic chemical vapor deposition. The Zn concentration and the net acceptor concentration for In0.5(Ga0.3Al0.7)0.5P monotonically increased with increasing tilt angle, using (100) substrates tilted towards [011], but they at first decreased and next increased using (100) substrates tilted towards [011BAR]. A similar behavior was found for the tilt angle dependence of the band gap energy of undoped In0.5Ga0.5P. The Si concentration and the net donor concentration of In0.5(Ga0.3Al0.7)0.5P gradually increased with increasing the substrate tilt angle, independent of the tilt direction. Neither the Zn nor the Si electrical activity depended on the substrate orientation.

引用

页码：127 / 130

页数：4

共 11 条

[1] SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS
BELLON, P
CHEVALIER, JP
AUGARDE, E
ANDRE, JP
MARTIN, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2388 - 2394
[2] LARGE (6-DEGREE) OFF-ANGLE EFFECTS ON SUBLATTICE ORDERING AND BAND-GAP ENERGY IN GA0.5IN0.5P GROWN ON (001) GAAS SUBSTRATES
GOMYO, A
KAWATA, S
SUZUKI, T
IIJIMA, S
HINO, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1728 - L1730
[3] NONEXISTENCE OF LONG-RANGE ORDER IN GA0.5IN0.5P EPITAXIAL LAYERS GROWN ON (111)B AND (110) GAAS SUBSTRATES
GOMYO, A
SUZUKI, T
IIJIMA, S
HOTTA, H
FUJII, H
KAWATA, S
KOBAYASHI, K
UENO, Y
HINO, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2370 - L2372
[4] ISHIKAWA M, 1990, I PHYS C SER, V106, P575
[5] ZINC-DOPING OF (511)A LAYERS OF (AL0.6GA0.4)0.5IN0.5P GROWN BY ATMOSPHERIC METALORGANIC VAPOR-PHASE EPITAXY
MINAGAWA, S
KONDOW, M
[J]. ELECTRONICS LETTERS, 1989, 25 (06) : 413 - 414
[6] DEPENDENCE OF PHOTOLUMINESCENCE PEAK ENERGY OF MOVPE-GROWN ALGAINP ON SUBSTRATE ORIENTATION
MINAGAWA, S
KONDOW, M
[J]. ELECTRONICS LETTERS, 1989, 25 (12) : 758 - 759
[7] ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
NISHIKAWA, Y
TSUBURAI, Y
NOZAKI, C
OHBA, Y
KOKUBUN, Y
KINOSHITA, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2182 - 2184
[8] GROWTH TEMPERATURE-DEPENDENT ATOMIC ARRANGEMENTS AND THEIR ROLE ON BAND-GAP OF INGAAIP ALLOYS GROWN BY MOCVD
NOZAKI, C
OHBA, Y
SUGAWARA, H
YASUAMI, S
NAKANISI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 406 - 411
[9] INFLUENCE OF SUBSTRATE MISORIENTATION ON DEFECT AND IMPURITY INCORPORATION IN GAAS/ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
RADULESCU, DC
WICKS, GW
SCHAFF, WJ
CALAWA, AR
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 5115 - 5120
[10] BAND-GAP ENERGY ANOMALY AND SUBLATTICE ORDERING IN GAINP AND ALGAINP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
SUZUKI, T
GOMYO, A
IIJIMA, S
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2098 - 2106

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