AMBIENT SCANNING TUNNELING SPECTROSCOPY OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE

被引：21

作者：

DAGATA, JA

TSENG, W

机构：

[1] National Institute of Standards and Technology, Gaithersburg

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.108865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambient scanning tunneling spectroscopy (STS) of n- and p-doped GaAs (I 10) and (100) surfaces, prepared with a stable, electrically transparent surface oxide, reveals that the current-voltage (I-V) characteristics of these surfaces are essentially identical to the I-V properties of the free (110) surface cleaved in ultrahigh vacuum. These results demonstrate for the first time that: (1) meaningful STS spectra of GaAs surfaces can be obtained in air, (2) the passivating layer, consisting of a stable, ultrathin oxide [J. A. Dagata, W. Tseng, J. Bennett, J. Schneir, and H. H. Harary, Appl. Phys. Lett. 59, 3288 (1991)], allows the scanning tunneling microscopy tip to probe the bulk electrical properties of the semiconductor, and (3) quantitative doping information, 10(15) < N(A), N(D) < 10(19) CM-3, can be extracted from the STS data.

引用

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页码：591 / 593

页数：3

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