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THE ADVANCED UNIFIED DEFECT MODEL FOR SCHOTTKY-BARRIER FORMATION

被引：411
作者：
SPICER, WE
LILIENTALWEBER, Z
WEBER, E
NEWMAN, N
KENDELEWICZ, T
CAO, R
MCCANTS, C
MAHOWALD, P
MIYANO, K
LINDAU, I
机构：
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584244
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1245 / 1251
页数：7
相关论文
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