RELAXATION PHENOMENA ASSOCIATED WITH RADIATION-INDUCED TRAPPED CHARGE IN AL2O3 MOS DEVICES

被引：3

作者：

MICHELETTI, FB

KOLONDRA, F

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：131 / +

页数：1

共 13 条

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[3]

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :27-+

[5]

MICHELETTI FB, 1970, RCA REV, V31, P330

[6]

MICHELETTI FB, 1971, SOLID STATE TECHNOL, V14, P27

[7] PROPERTIES OF ALUMINUM OXIDE OBTAINED BY HYDROLYSIS OF AICI3 [J].

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NAKANUMA, S ;

IKUSHIMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :703-+

[8]

TUNG SK, 1965, T METALL SOC AIME, V233, P572

[9]

WALDEN RH, 1970 P IEEE REL PHYS

[10] AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS [J].

WAXMAN, A ;

ZAININGER, KH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :109-+

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