PERMANENT RADIATION EFFECTS IN HARDENED A1203 MOS INTEGRATED CIRCUITS

被引：5

作者：

MICHELET.FB

ZAININGE.KH

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / +

页数：1

共 18 条

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[9] RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES [J].

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