PROTONS AND DEUTERON IRRADIATION DAMAGE IN SILICON SOLAR CELLS

被引：8

作者：

NASHIYAMA, I

TERANISHI, E

KAGEYAMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 11期

关键词：

D O I：

10.1143/JJAP.10.1564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1564 / +

页数：1

共 20 条

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[2]

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[3]

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[8] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].

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[9]

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[10] ENERGY DEPENDENCE ON PROTON IRRADIATION DAMAGE IN SILICON [J].

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