AN ANALYSIS OF NON-UNIFORM PROTON IRRADIATION DAMAGE IN SILICON SOLAR CELLS

被引：5

作者：

CROWTHER, DL

LODI, EA

DEPANGHER, J

ANDREW, A

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 05期

关键词：

D O I：

10.1109/TNS.1966.4324326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / +

页数：1

共 19 条

[1] LIFETIME IN P-TYPE SILICON [J].

BLAKEMORE, JS .

PHYSICAL REVIEW, 1958, 110 (06) :1301-1308

[2] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[3]

BULLIS WM, 1965, INFLUENCE MOBILITY V

[4]

CROWTHER DL, 1964, LMSC6746439 REP

[5] SPECTRAL RESPONSE OF SOLAR CELLS [J].

DALE, B ;

SMITH, FP .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1377-&

[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7]

DENNEY JW, 1963, 86536026KU000 SPAC T

[8]

FAN HY, 1956, PHOTOCONDUCTIVITY C, P184

[9] IRRADIATION OF P-N JUNCTIONS WITH GAMMA-RAYS - A METHOD FOR MEASURING DIFFUSION LENGTHS [J].

GREMMELMAIER, R .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1045-1049

[10] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

← 1 2 →