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PHOTOVOLTAIC PROPERTIES OF SPRAYED IN2O3-INP JUNCTIONS

被引：7
作者：
SUBRAHMANYAM, A
VASU, V
RAGHAVAN, PS
KUMAR, J
RAMASAMY, P
机构：
[1] INDIAN INST TECHNOL, DEPT PHYS, SEMICOND LAB, MADRAS 600036, TAMIL NADU, INDIA
[2] ANNA UNIV, CTR CRYSTAL GROWTH, MADRAS 600025, INDIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 04期
关键词：
D O I：
10.1016/0921-5107(92)90076-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photovoltaic properties of In2O3-InP (monocrystalline) junctions prepared by the spray pyrolysis technique as a function of process temperature are reported. In2O3-n-InP junctions have not exhibited any photovoltaic property; a maximum photo conversion efficiency of 8.7% (under 100 mW cm-2 illumination) is observed in In2O3-p-InP junctions prepared at 340-degrees-C. By capacitance-voltage measurements the built in potential is found to be 1.10 eV. The properties of the junction indicate the possibility of forming a thin insulating interfacial layer.
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页码：365 / 368
页数：4
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