PHOTOENHANCED THERMAL-OXIDATION OF INP

被引：11

作者：

FATHIPOUR, M

BOYER, PK

COLLINS, GJ

WILMSEN, CW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：637 / 642

页数：6

共 26 条

[1] PREPARATION OF HIGH-QUALITY SURFACES ON SEMICONDUCTORS BY SELECTIVE CHEMICAL ETCHING [J].

ASPNES, DE ;

STUDNA, AA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :488-489

[2] INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON INAS [J].

BAGLEE, DA ;

FERRY, DK ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1032-1036

[3] PHOTOENHANCED OXIDATION OF GALLIUM-ARSENIDE [J].

BERMUDEZ, VM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6795-6798

[4] XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].

BERTRAND, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33

[5] LASER-ENHANCED OXIDATION OF SI [J].

BOYD, IW .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :728-730

[6] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J].

BOYER, PK ;

ROCHE, GA ;

RITCHIE, WH ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :716-719

[7] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J].

CHANG, LL ;

HOWARD, WE .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :210-&

[8] AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].

CLARK, DT ;

FOK, T ;

ROBERTS, GG ;

SYKES, RW .

THIN SOLID FILMS, 1980, 70 (02) :261-283

[9] MEASUREMENTS OF THE BRANCHING RATIOS FOR THE REACTION OF O(1D2) WITH N2O [J].

DAVIDSON, JA ;

HOWARD, CJ ;

SCHIFF, HI ;

FEHSENFELD, FC .

JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (04) :1697-1704

[10]

GREINER NR, 1976, J CHEM PHYS, V47, P4373

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