PREPARATION OF HIGH-QUALITY SURFACES ON SEMICONDUCTORS BY SELECTIVE CHEMICAL ETCHING

被引：16

作者：

ASPNES, DE

STUDNA, AA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：488 / 489

页数：2

共 9 条

[1] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060

[2] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318

[3] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[4] METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].

ASPNES, DE ;

STUDNA, AA .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297

[5]

ASPNES DE, 1981, SPIE P, V276, P227

[6] NATURE OF THE SI(111)7X7 RECONSTRUCTION [J].

CARDILLO, MJ .

PHYSICAL REVIEW B, 1981, 23 (08) :4279-4282

[7] STRUCTURE OF SI(111)-(7X7)H [J].

MCRAE, EG ;

CALDWELL, CW .

PHYSICAL REVIEW LETTERS, 1981, 46 (25) :1632-1635

[8]

PHILIPP HR, 1963, PHYS REV, V129, P550

[9] CHEMICAL ETCHING OF SILICON .4. ETCHING TECHNOLOGY [J].

SCHWARTZ, B ;

ROBBINS, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1903-1909

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