X-BAND POWER ALGAAS/INGAAS P-N-P HBTS

被引：13

作者：

HILL, DG

KIM, TS

TSERNG, HQ

机构：

[1] Texas Instruments Incorporated, Dallas

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期

关键词：

D O I：

10.1109/55.215156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs / InGaAs P-n-p HBT's have been fabricated using carbon-doped material grown by nonarsine MOVPE. F(max) of 39 GHz and f(t) of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter length from 120 to 600 mum.

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页码：185 / 187

页数：3

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