UNIFORM, HIGH-GAIN ALGAAS/IN0.05GA0.95AS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS BY DUAL SELECTIVE ETCH PROCESS

被引：8

作者：

HILL, DG ^{[1
]}

LEE, WS ^{[1
]}

MA, T ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.62984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/InGaAs/GaAs P-n-p heterojunction bipolar transistors (HBT's) have been fabricated using a dual selective etch process. In this process, a thin AlGaAs surface passivation layer surrounding the emitter is defined by selective etching of the GaAs cap layer. The InGaAs base is then exposed by selective etching of the AlGaAs emitter. The resulting devices were very uniform, with current gain varying by less than ± 10% for a given device size. Current gain at a given emitter current density was independent of device size, with gains of over 200 obtained at current densities above 5 × 104 A/cm2. © 1990 IEEE

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页码：425 / 427

页数：3

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