DC PERFORMANCE OF GAAS/ALXGA1-XAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY OMVPE

被引：7

作者：

DELYON, T ^{[1
]}

CASEY, HC ^{[1
]}

ENQUIST, PM ^{[1
]}

HUTCHBY, JA ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

SEMICONDUCTOR DEVICES; BIPOLAR; --; Performance;

D O I：

10.1109/16.2566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of the current gain obtained in GaAs/AlxGa131xAs p-n-p heterojunction bipolar transistors fabricated from organometallic vapor-phase-epitaxial (OMVPE) material is reported. The structures studied included an abrupt base-emitter junction without a base spacer layer and two other structures with a 100-angstrom undoped base spacer layer with either an abrupt or a linearly graded base emitter junction. Analysis of current gain in these devices indicates that surface recombination dominates the base current and that an undoped base spacer layer is not needed.

引用

收藏

页码：1389 / 1391

页数：3

相关论文

共 14 条

[1] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

CHAND, N ;

HENDERSON, T ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

GIACOLETTO, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :302-304

[2]

ENQUIST PM, 1985, I PHYS C SER, V74, P599

[3] AP-N-P ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-TEMPERATURE OPERATION [J].

FROST, MS ;

RICHES, M ;

KERR, T .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2149-2153

[4] GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD [J].

GLEW, RW ;

FROST, MS .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :450-452

[5]

GREINER ME, 1984, SILICON DIFFUSION GA, P55

[6] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[7] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J].

HUTCHBY, JA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :108-111

[8] GENERATION-RECOMBINATION CURRENT IN THE EMITTER-BASE JUNCTION OF ALGAAS/GAAS HBTS [J].

ITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (09) :1400-1404

[9] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J].

MALIK, RJ ;

CAPASSO, F ;

STALL, RA ;

KIEHL, RA ;

RYAN, RW ;

WUNDER, R ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :600-602

[10] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598