SURFACE RECOMBINATION CURRENT AND EMITTER COMPOSITIONAL GRADING IN NPN AND PNP GAAS ALXGA1-XAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：23

作者：

DELYON, TJ

CASEY, HC

ENQUIST, PM

HUTCHBY, JA

SPRINGTHORPE, AJ

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[2] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：641 / 643

页数：3

共 8 条

[1] DOPING EFFECTS AND COMPOSITIONAL GRADING IN AL GA1-AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHAND, N ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1064-1069

[2] DC PERFORMANCE OF GAAS/ALXGA1-XAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY OMVPE [J].

DELYON, T ;

CASEY, HC ;

ENQUIST, PM ;

HUTCHBY, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1389-1391

[3] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[4] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

GOSSARD, AC ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (19) :766-767

[5]

IZAWA T, 1985, 1985 IEDM WASH, P328

[6] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598

[7] EMITTER GRADING IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

TAIRA, K ;

TAKANO, C ;

KAWAI, H ;

ARAI, M .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1278-1280

[8]

TIWARI S, 1988, 46TH ANN DEV RES C B

← 1 →