ALGAAS/GAINAS STRAINED-BASE PNP HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5

作者：

HILL, DG

LEE, WS

MA, T

HARRIS, JS

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 15期

关键词：

D O I：

10.1049/el:19890664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：993 / 995

页数：3

共 7 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTOR USING PSEUDOMORPHIC GAINAS FOR THE BASE [J].

ENQUIST, PM ;

RAMBERG, LR ;

NAJJAR, FE ;

SCHAFF, WJ ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :179-180

[2] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[3] TWO-DIMENSIONAL ANALYSIS OF EMITTER-SIZE EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS [J].

HIRAOKA, YS ;

YOSHIDA, J ;

AZUMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :721-725

[4] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05) :L421-L424

[5] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].

LIN, HH ;

LEE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :839-841

[6] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

SULLIVAN, GJ ;

ASBECK, PM ;

CHANG, MF ;

MILLER, DL ;

WANG, KC .

ELECTRONICS LETTERS, 1986, 22 (08) :419-421

[7] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED [J].

SUNDERLAND, DA ;

DAPKUS, PD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :367-377

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