HIGH-FREQUENCY PNP ALGAAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN ULTRATHIN STRAINED BASE

被引：4

作者：

LIU, WU

HILL, D

COSTA, D

HARRIS, JS

机构：

[1] Electrical Engineering Department, Stanford University, Stanford, MuCullough Bldg. 226

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 24期

关键词：

Bipolar Devies; Semiconductor Devices and materiales;

D O I：

10.1049/el:19901293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High Performance pnp AlGaAs/InGaAs Hetrojunction bipolar transistors (HBTs)have been fabricated. The transistors have a 300 Å strained InGaAs base, with indium composition linearly graded from 0 to 15 % The cutoff frequency and maximum oscillation frequncy for a transistor with emitter area of 2 x 8 μm2 are measured to be 23.36 GHz and 40GHz, respectively, at a collector current of -10mA. These are the highest published results for pnp HBTs. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：2000 / 2002

页数：3

共 11 条

[1] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].