A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS

被引：559

作者：

KUHN, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 06期

关键词：

D O I：

10.1016/0038-1101(70)90073-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：873 / +

页数：1

相关论文

共 14 条

[11] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[12] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[13] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299
[14] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES
ZAININGER, KH
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +