REQUIRED DONOR CONCENTRATION OF EPITAXIAL LAYERS FOR EFFICIENT INGAASP AVALANCHE PHOTO-DIODES

被引：65

作者：

TAKANASHI, Y

KAWASHIMA, M

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 04期

关键词：

D O I：

10.1143/JJAP.19.693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：693 / 701

页数：9

共 23 条

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