MOLECULAR-BEAM EPITAXY OF STRAINED SI1-XGEX LAYERS ON PATTERNED SUBSTRATES

被引：7

作者：

BUGIEL, E

DIETRICH, B

OSTEN, HJ

机构：

[1] Institute of Semiconductor Physics, W.-Korsing Strasse 2

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 130卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90550-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial Si1-xGex layers have been grown on patterned Si(001) substrates. Mesa-like structures of 1.4 mum height on the surface limited by inclined {111} planes were used. Structure dimensions between 10 and 0.2 mum were chosen to allow the mesas to relieve elastically under the strained layer. The film growth, the crystallographic perfection and the relaxation of strained Si1-xGex layers were investigated by transmission electron microscopy (TEM) including in situ annealing. The relaxation mechanism and the control of dislocation generation on top of the mesas are discussed.

引用

页码：611 / 616

页数：6

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