MASKLESS GROWTH OF INP STRIPES ON PATTERNED SI(001) - DEFECT REDUCTION AND IMPROVEMENT OF OPTICAL-PROPERTIES

被引：11

作者：

GRUNDMANN, M

KROST, A

BIMBERG, D

EHRMANN, O

CERVA, H

机构：

[1] TECH UNIV BERLIN,INST MIKROPERIPHERIK,W-1000 BERLIN 12,GERMANY

[2] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metalorganic vapor phase epitaxy of InP stripes on narrow Si (001) stripes of widths down to 0.6-mu-m, oriented along [110], bound by V-grooves with {111}-sidewalls is studied. If the InP-stripe width is smaller than almost-equal-to 4.5-mu-m, a complete suppression of APDs occurs. In addition, stacking faults are found not to terminate at the (001) InP surface but on {111} side planes. A smoother surface morphology and an increase of quantum efficiency by a factor 1.5-2 result. The thermal strain is observed to be partly relieved with decreasing stripe width. Lateral strain and band-gap homogeneity is directly imaged using cathodoluminescence. Si incorporation into the InP-layers is low and of the order of 10(16) cm-3.

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收藏

页码：3292 / 3294

页数：3

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