DAMAGE EFFECTS IN BORON AND BF2 ION-IMPLANTED P+-N JUNCTIONS IN SILICON

被引：16

作者：

MACIVER, BA ^{[1
]}

GREENSTEIN, E ^{[1
]}

机构：

[1] GM CORP,RES LABS,WARREN,MI 48090

来源：

关键词：

D O I：

10.1149/1.2133278

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：273 / 275

页数：3

共 10 条

[1] BAUER LO, 1971, 2 P INT C ION IMPL, P70
[2] EISEN FH, 1970, ION IMPLANTATION, P459
[3] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054
[4] MULLER H, 1971, 2 INT C ION IMPL SEM, P85
[5] NELSON RS, 1970, SEP P EUR C ION IMPL, P212
[6] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES
PRUSSIN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642
[7] ADAPTION OF ION-IMPLANTATION FOR INTEGRATED-CIRCUITS
PRUSSIN, S
FERN, AM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 830 - 832
[8] PRUSSIN S, 1975, 4TH P INT C ION IMPL
[9] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON.
Ravi, K.V.
Varker, C.J.
Volk, C.E.
[J]. Journal of the Electrochemical Society, 1973, 120 (04) : 533 - 541
[10] SEIDEL TE, 1975, IEEE INT ELECTRON DE, P581