ADAPTION OF ION-IMPLANTATION FOR INTEGRATED-CIRCUITS

被引：9

作者：

PRUSSIN, S ^{[1
]}

FERN, AM ^{[1
]}

机构：

[1] TRW SEMICOND,LAWNDALE,CA 90260

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 06期

关键词：

D O I：

10.1149/1.2134333

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：830 / 832

页数：3

相关论文

共 5 条

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
HESS, MS
ROY, MM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &
[2] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[3] INFLUENCE OF STATIONARY DISLOCATIONS AND STACKING FAULTS ON SOME TRANSISTOR PARAMETERS
PAREKH, PC
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (04) : 273 - &
[4] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES
PRUSSIN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642
[5] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON
TAMURA, M
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 651 - 653