GROWTH OF PBTE FILMS UNDER NEAR-EQUILIBRIUM CONDITIONS

被引：31

作者：

LOPEZOTERO, A ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,LEHRKANZEL EXPTL PHYS 2,LINZ,AUSTRIA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：446 / 448

页数：3

共 13 条

[1]

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[2]

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[3]

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[4]

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HOLLOWAY, H .

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[6] HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING [J].

HOLLOWAY, H ;

LOGOTHEI.EM .

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[7] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

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JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[8] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES [J].

HOLLOWAY, H ;

YEUNG, KF ;

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WEBER, WH ;

LOGOTHETIS, EM .

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[9]

LOGOTHETIS EM, 1970, SOLID STATE COMMUN, V8, P1973

[10] USE OF A PHASE-DIAGRAM AS A GUIDE FOR GROWTH OF PBTE FILMS [J].

LOPEZOTERO, A .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :470-472

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