IMPROVEMENT IN LAYER QUALITY OF CUGAS2 GROWN BY VAPOR-PHASE EPITAXY WITH METAL CHLORIDES AND H2S SOURCES

被引：11

作者：

TSUBOI, N

ISU, T

ANDO, Y

SAWADA, M

IIDA, S

机构：

[1] Mitsubishikasei Corp, Higashi- mamiana Ibaraki, Ushiku, 300-12, Tsukuba Plant

[2] Atlas Taskforce Canon Inc., Oota-ku, Tokyo, 146

[3] Nagaoka University of Technology, Kamitomioka, Nagaoka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

VAPOR PHASE EPITAXY; ATOMIC LAYER EPITAXY; CUGAS(2); X-RAY DIFFRACTION; PHOTOLUMINESCENCE; CHALCOPYRITE COMPOUND;

D O I：

10.7567/JJAPS.32S3.145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In vapor phase epitaxial growth of CuGaS2 on GaP substrates under simultaneous feeding of H2S and metal chlorides, two-step growth was found to be useful for obtaining thick layers with single orientation of c-axis of the chalcopyrite normal to the substrate. Under alternate feeding of H2S and mixed gas of the chlorides, saturation behavior of growth rate was observed for the feeding amount of copper chloride and that of gallium chloride, and also for the supplying period of H2S gas. These results strongly suggest atomic layer epitaxy of CuGaS2. The layers grown under alternate feeding as well as layers by the two-step process under simultaneous feeding showed strong free exciton emission at low temperatures, indicating high quality of these layers.

引用

页码：145 / 146

页数：2

共 6 条

[1] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].