THE NATURE OF INTERMEDIATE RANGE ORDER IN SI-F-H-(P) ALLOY SYSTEMS

被引:28
作者
TSU, R [1 ]
CHAO, SS [1 ]
IZU, M [1 ]
OVSHINSKY, SR [1 ]
JAN, GJ [1 ]
POLLAK, FH [1 ]
机构
[1] CUNY BROOKLYN COLL,BROOKLYN,NY 11210
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
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D O I
10.1051/jphyscol:1981457
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页码:269 / 272
页数:4
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共 13 条
[1]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[2]  
DOLLING G, 1972, S CHALK RIVER, V2, P37
[3]  
GOODMAN AM, 1979, I PHYS C SER, V43, P805
[4]   LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J].
HAMASAKI, T ;
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1980, 37 (12) :1084-1086
[5]   POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].
IQBAL, Z ;
WEBB, AP ;
VEPREK, S .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165
[6]   EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J].
MOSS, SC ;
GRACZYK, JF .
PHYSICAL REVIEW LETTERS, 1969, 23 (20) :1167-&
[7]   CRITICAL DENSITY IN PERCOLATION PROCESSES [J].
SCHER, H ;
ZALLEN, R .
JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) :3759-&
[8]  
TANAKA K, 1980, 12TH P C SOL STAT DE
[9]  
TSU R, 1980, B AM PHYS SOC, V25, P295
[10]   ELECTROREFLECTANCE AND RAMAN-SCATTERING INVESTIGATION OF GLOW-DISCHARGE AMORPHOUS SI-F-H [J].
TSU, R ;
IZU, M ;
OVSHINSKY, SR ;
POLLAK, FH .
SOLID STATE COMMUNICATIONS, 1980, 36 (09) :817-822