DIFFUSE-SCATTERING MODEL OF EFFECTIVE MOBILITY IN STRONGLY INVERTED LAYER OF MOS-TRANSISTORS

被引：16

作者：

BACCARANI, G ^{[1
]}

MAZZONE, AM ^{[1
]}

MORANDI, C ^{[1
]}

机构：

[1] CNR LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1101(74)90025-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：785 / 789

页数：5

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