OBSERVATIONS OF DISLOCATIONS IN PHOSPHORUS-DIFFUSED SILICON BY X-RAY AND ETCHING TECHNIQUES

被引：15

作者：

YOSHIDA, M

ARATA, H

TERUNUMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 03期

关键词：

D O I：

10.1143/JJAP.7.209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：209 / &

共 17 条

[1] INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE [J].

FAIRFIELD, JM ;

SCHWUTTK.GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) :1229-+

[2] DIFFUSION-INDUCED DISLOCATION NETWORKS IN SI ( P + B DIFFUSION E/T ) [J].

JACCODINE, RJ .

APPLIED PHYSICS LETTERS, 1964, 4 (06) :114-&

[3] EFFECT OF FAST COOLING ON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

JOSHI, ML .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :912-&

[4] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

JOSHI, ML ;

WILHELM, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :185-&

[5] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J].

JUNGBLUT.ED ;

WANG, P .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :1967-&

[6]

LEVINE E, 1967, J APPL PHYS, V38, P81, DOI 10.1063/1.1709015

[7] DISLOCATION DAMPING IN SEMICONDUCTORS + ABRUPT VERSUS SMOOTH KINKS [J].

NINOMIYA, T ;

THOMSON, R ;

GARCIAMOLINER, F .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3607-&

[8]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[9] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J].

QUEISSER, HJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1776-&

[10] DISTRIBUTION OF BORON-INDUCED DEFECTS IN SHALLOW DIFFUSED SURFACE LAYERS OF SILICON [J].

RUPPRECHT, H ;

SCHWUTTKE, GH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2862-+

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