EXPOSURE BLEACHING OF NONLINEAR RESIST MATERIALS - EXACT SOLUTION

被引：7

作者：

BABU, SV ^{[1
]}

BAROUCH, E ^{[1
]}

机构：

[1] CLARKSON UNIV,DEPT MATH & COMP SCI,POTSDAM,NY 13676

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：401 / 403

页数：3

共 10 条

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[3]

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[5] MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS [J].

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NEUREUTHER, AR ;

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WALKER, EJ .

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[6] OPTICAL LITHOGRAPHY [J].

DILL, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :440-444

[7]

HOFER DC, 1984, P SOC PHOTO-OPT INST, V469, P108, DOI 10.1117/12.941784

[8]

NEUREUTHER AR, 1985, SOLID STATE TECHNOL, V28, P139

[9]

NEUREUTHER AR, 1987, COMMUNICATION

[10] THE USE OF CONTRAST ENHANCEMENT LAYERS TO IMPROVE THE EFFECTIVE CONTRAST OF POSITIVE PHOTORESIST [J].

OLDHAM, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :247-251

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