DOSE THRESHOLDS FOR IMPLANTATION OF IRON-DOPED INDIUM-PHOSPHIDE

被引：6

作者：

ZEISSE, CR

REEDY, RE

机构：

来源：

关键词：

D O I：

10.1063/1.329157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3353 / 3356

页数：4

共 11 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
SMITH, FGH
WILLIAMS, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[2] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP
DAVIES, DE
POTTER, WD
LORENZO, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1845 - 1848
[3] DAVIES DE, 1980 P NAT SPONS INP, P521
[4] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA
DONNELLY, JP
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420
[5] FAVENNEC PN, 1980 P NAT SPONS INP, P557
[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] INP GROWTH AND PROPERTIES
HENRY, RL
SWIGGARD, EM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 647 - 657
[8] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[9] ISELER GW, 1979, I PHYS C SER, V45, P144
[10] KUNDUKHOV RM, 1967, SOV PHYS SEMICOND+, V1, P765