DETECTIVITY CALCULATIONS FOR PHOTOVOLTAIC HETEROJUNCTION DETECTORS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] AN INFRARED SENSITIVE GE-TE HETEROJUNCTION [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (12) : 2150 - &

[3] AUGSTA B, 1965, J APPL PHYS, V36, P206

[4] GE-EPITAXIAL-PBS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1670 - &

[5] DELVEN R, 1969, INFRARED PHYS, V9, P141

[6] Devlin S.S., 1967, PHYSICS CHEMISTRY 2, P603

[7] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &

[8] GOBELI GW, 1966, SEMICONDUCTORS SEMIM, V2, P257

[9] SILICON-GERMANIUM N-P HETEROJUNCTION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11): : 1331 - &

[10] HASS M, 1967, SEMICONDUCT SEMIMET, V3, P14

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] AN INFRARED SENSITIVE GE-TE HETEROJUNCTION [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (12) : 2150 - &

[3] AUGSTA B, 1965, J APPL PHYS, V36, P206

[4] GE-EPITAXIAL-PBS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1670 - &

[5] DELVEN R, 1969, INFRARED PHYS, V9, P141

[6] Devlin S.S., 1967, PHYSICS CHEMISTRY 2, P603

[7] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &

[8] GOBELI GW, 1966, SEMICONDUCTORS SEMIM, V2, P257

[9] SILICON-GERMANIUM N-P HETEROJUNCTION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11): : 1331 - &

[10] HASS M, 1967, SEMICONDUCT SEMIMET, V3, P14