SI BIPOLAR CHIP SET FOR 10-GB/S OPTICAL RECEIVER

被引:19
作者
SUZAKI, T [1 ]
SODA, M [1 ]
MORIKAWA, T [1 ]
TEZUKA, H [1 ]
OGAWA, C [1 ]
FUJITA, S [1 ]
TAKEMURA, H [1 ]
TASHIRO, T [1 ]
机构
[1] NEC CORP LTD,ULSI DEVICE DEV LABS,KANAGAWA 229,JAPAN
关键词
D O I
10.1109/4.173105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three Si bipolar IC's, a preamplifier, a gain-controllable amplifier, and a decision circuit, have been developed for 10-Gb/s optical receivers. A dual-feedback configuration with a phase adjustment capacitor makes it possible to increase the preamplifier bandwidth up to 11.2 GHz, while still retaining flat frequency response. The gain-controllable amplifier, which utilizes a current-dividing amplifier stage, has a 11.4-GHz bandwidth with 20-dB gain variation. A master-slave D-type flip-flop is also operated as the decision circuit at 10 Gb/s. On-chip coplanar lines were applied to minimize the electrical reflection between the IC's.
引用
收藏
页码:1781 / 1786
页数:6
相关论文
共 29 条
[1]   A SI-BIPOLAR TECHNOLOGY FOR OPTICAL FIBER TRANSMISSION RATES ABOVE 10 GB/S [J].
ALBERS, JN ;
SCHREIBER, HU .
IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1991, 9 (05) :652-655
[2]   OVER 10 GB/S REGENERATORS USING MONOLITHIC ICS FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J].
HAGIMOTO, K ;
MIYAGAWA, Y ;
MIYAMOTO, Y ;
OHHATA, M ;
SUZUKI, T ;
KIKUCHI, H .
IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1991, 9 (05) :673-682
[3]  
HAGIMOTO K, 1989, 7TH INT C INT OPT OP, V1, P22
[4]   10 GBIT/S OPTICAL FRONT END USING SI-BIPOLAR PREAMPLIFIER IC, FLIPCHIP APD, AND SLANT-END FIBER [J].
HAMANO, H ;
YAMAMOTO, T ;
NISHIZAWA, Y ;
OIKAWA, Y ;
KUWATSUKA, H ;
TAHARA, A ;
SUZUKI, K ;
NISHIMURA, A .
ELECTRONICS LETTERS, 1991, 27 (18) :1602-1605
[5]   HIGH-SPEED SI-BIPOLAR IC DESIGN FOR MULTI-GB/S OPTICAL RECEIVERS [J].
HAMANO, H ;
YAMAMOTO, T ;
NISHIZAWA, Y ;
TAHARA, A ;
MIYOSHI, N ;
SUZUKI, K ;
NISHIMURA, A .
IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1991, 9 (05) :645-651
[6]   20 GBIT/S ALGAAS/GAAS-HBT 2-1 SELECTOR AND DECISION ICS [J].
HAMANO, H ;
IHARA, T ;
AMEMIYA, I ;
FUTATSUGI, T ;
ISHII, K ;
ENDOH, H .
ELECTRONICS LETTERS, 1991, 27 (08) :662-664
[7]  
HAUENSCHILD J, 1991, ELECTRON LETT, V27, P2382
[8]   28 GBIT/S SELECTOR IC USING ALGAAS/GAAS HBTS [J].
ICHINO, H ;
YAMAUCHI, Y ;
NITTONO, T ;
NAGATA, K ;
NAKAJIMA, O .
ELECTRONICS LETTERS, 1991, 27 (08) :636-637
[9]  
IKUSHIMA I, 1982, P GLOBECOM 82, P399
[10]   9GHZ BANDWIDTH, 8-20 DB CONTROLLABLE-GAIN MONOLITHIC AMPLIFIER USING ALGAAS GAAS HBT TECHNOLOGY [J].
ISHIHARA, N ;
NAKAJIMA, O ;
ICHINO, H ;
YAMAUCHI, Y .
ELECTRONICS LETTERS, 1989, 25 (19) :1317-1318