A MONTE-CARLO SIMULATION OF DAMAGE TO THE GATE OXIDE OF METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS FROM ELECTRON-BEAM LITHOGRAPHY

被引：3

作者：

CUMMINGS, KD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2024 / 2030

页数：7

共 25 条

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