INYGA1-YAS/GAAS INTERFACE SMOOTHING BY GAAS MONOLAYERS IN HIGHLY STRAINED GRADED SUPERLATTICE CHANNELS (0.2-LESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.4) FOR PSEUDOMORPHIC ALXGA1-XAS/INYGA1-YAS HFET

被引：1

作者：

KRAUS, J ^{[1
]}

MESCHEDE, H ^{[1
]}

LIU, Q ^{[1
]}

PROST, W ^{[1
]}

TEGUDE, FJ ^{[1
]}

LAKNER, H ^{[1
]}

KUBALEK, E ^{[1
]}

机构：

[1] UNIV GESAMTHSCH DUISBURG,WERKSTOFFE ELEKTROTECH,W-4100 DUISBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90689-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to establish an indium content of more than 30% in pseudomorphic AlxGa1-xAs/InyGa1-yAs HFET, a highly strained InyGa1-yAs/GaAs graded superlattice as active channel is introduced. The superlattice is designed to utilize a thin layer of In0.4Ga0.6As at the location of the maximum probability density of electrons. Smoothing of the InyGa1-yAs surface is provided by the overgrowth of GaAs monolayers as demonstrated by RHEED intensity oscillations. The quality of the superlattice channel is confirmed by high resolution STEM analysis. Optimization of MBE growth parameters, transport properties and device performance is reported.

引用

页码：589 / 591

页数：3

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