SCATTERING INTENSITY OF AMORPHOUS SILICON IN A RANDOM STACKING MODEL

被引：3

作者：

AKEDA, Y ^{[1
]}

YONEZAWA, F ^{[1
]}

机构：

[1] KYOTO UNIV,FUNDAMENTAL PHYS RES INST,KYOTO 606,JAPAN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 24期

关键词：

D O I：

10.1088/0022-3719/11/24/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4849 / 4865

页数：17

共 11 条

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[2]

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[3]

Grigorovici R., 1969, Journal of Non-Crystalline Solids, V1, P371, DOI 10.1016/0022-3093(69)90020-9

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[8] STRUCTURE OF AMORPHOUS GE AND SI [J].

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[9] RANDOM STACKING MODEL FOR TETRAHEDRALLY COORDINATED AMORPHOUS-SEMICONDUCTORS [J].

YONEZAWA, F ;

BIRMAN, JL .

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[10] RANDOM STACKING MODEL APPLIED TO TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS - SCATTERING INTENSITY [J].

YONEZAWA, F ;

BIRMAN, JL .

PHYSICAL REVIEW B, 1977, 16 (06) :2707-2716

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