A COMPARISON OF CARBON AND ZINC DOPING IN GAAS/ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING

被引:16
作者
AYLING, SG [1 ]
BRYCE, AC [1 ]
GONTIJO, I [1 ]
MARSH, JH [1 ]
ROBERTS, JS [1 ]
机构
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
关键词
D O I
10.1088/0268-1242/9/11/020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bandgap tuning by impurity-free vacancy disordering was investigated on carbon and zinc p-doped laser structures. Zinc diffused during annealing and consequently only carbon-doped material lased. After annealing, threshold current densities rose from 225 to 255 A cm(-2) due to an increase in the transparency current; the gain constant of the quantum wells remained constant.
引用
收藏
页码:2149 / 2151
页数:3
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