SCHOTTKY CONTACT FABRICATION FOR GAAS-MESFETS

被引：7

作者：

MIERS, TH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124296

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1795 / 1799

页数：5

共 26 条

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].

ADAMS, AC ;

PRUNIAUX, BR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414

[2]

CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[3] EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J].

CHILDS, RB ;

RUTHS, JM ;

SULLIVAN, TE ;

FONASH, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1397-1401

[4]

CHRISTOU A, 1977, I PHYS C SER B, V33, P197

[5]

CORD HC, 1976, IEEE T ELECTRON DEVI, V23, P538

[6] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[7] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J].

GARNER, CM ;

SU, CY ;

SAPERSTEIN, WA ;

JEW, KG ;

LEE, CS ;

PEARSON, GL ;

SPICER, WE .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3376-3382

[8] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].

KAHNG, D .

SOLID-STATE ELECTRONICS, 1963, 6 (03) :281-295

[9]

KAPLAN LH, 1980, J ELECTROCHEM SOC, V127, P387

[10] CORRELATION BETWEEN ETCH CHARACTERISTICS OF GAAS ETCH SOLUTIONS CONTAINING H2O2 AND SURFACE-FILM CHARACTERISTICS [J].

KOHN, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :505-508

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