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A NEW REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE-POWER FETS AND MMICS

被引：27
作者：
GEISSBERGER, AE
BAHL, IJ
GRIFFIN, EL
SADLER, RA
机构：
[1] ITT, Roanoke, VA, USA, ITT, Roanoke, VA, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期
关键词：
D O I：
10.1109/16.2503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：615 / 622
页数：8
相关论文
共 5 条
[1]   COMPARATIVE RELIABILITY STUDY OF GAAS POWER MESFETS - MECHANISMS FOR SURFACE-INDUCED DEGRADATION AND A RELIABLE SOLUTION [J].
DUMAS, JM ;
LECROSNIER, D ;
PAUGAM, J ;
VUCHENER, C .
ELECTRONICS LETTERS, 1985, 21 (03) :115-116
[2]   REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE FETS AND MMICS [J].
GEISSBERGER, AE ;
SADLER, RA ;
GRIFFIN, EL ;
BAHL, IJ ;
BALZAN, ML .
ELECTRONICS LETTERS, 1987, 23 (20) :1073-1075
[3]  
GEISSBERGER AE, 1987, J VAC SCI TECHNOL B, V5
[4]  
KASHIWAGI S, 1987, IRPS P, P97
[5]   COMPARISON OF LOW-TEMPERATURE AND HIGH-TEMPERATURE REFRACTORY-METAL SILICIDES SELF-ALIGNED GATE ON GAAS [J].
KWOK, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1383-1391
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