COMPARATIVE RELIABILITY STUDY OF GAAS POWER MESFETS - MECHANISMS FOR SURFACE-INDUCED DEGRADATION AND A RELIABLE SOLUTION

被引：6

作者：

DUMAS, JM

LECROSNIER, D

PAUGAM, J

VUCHENER, C

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 03期

关键词：

D O I：

10.1049/el:19850080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 116

页数：2

共 8 条

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[3]

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[7] GAAS OXIDATION AND THE GA-AS-O EQUILIBRIUM PHASE-DIAGRAM [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1366-1371

[8] LONG-TERM AND INSTANTANEOUS BURNOUT IN GAAS POWER FETS - MECHANISMS AND SOLUTIONS [J].

WEMPLE, SH ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :834-840

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