AN ANALYTIC SOLUTION OF THE TWO-DIMENSIONAL POISSON EQUATION AND A MODEL OF GATE CURRENT AND BREAKDOWN VOLTAGE FOR REVERSE GATE-DRAIN BIAS IN GAAS-MESFETS

被引：17

作者：

CHANG, CS

DAY, DYS

机构：

[1] Avantek Inc, United States

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 11期

关键词：

16;

D O I：

10.1016/0038-1101(89)90158-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 978

页数：8

共 16 条

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