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ANALYTIC THEORY FOR CURRENT VOLTAGE CHARACTERISTICS AND FIELD DISTRIBUTION OF GAAS-MESFETS
被引:36
作者
:
CHANG, CS
论文数:
0
引用数:
0
h-index:
0
CHANG, CS
DAY, DYS
论文数:
0
引用数:
0
h-index:
0
DAY, DYS
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1989年
/ 36卷
/ 02期
关键词
:
D O I
:
10.1109/16.19926
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:269 / 280
页数:12
相关论文
共 22 条
[1]
ELECTRON-DRIFT VELOCITY VERSUS ELECTRIC-FIELD IN GAAS
[J].
CHANG, CS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA
CHANG, CS
;
FETTERMAN, HR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA
FETTERMAN, HR
.
SOLID-STATE ELECTRONICS,
1986,
29
(12)
:1295
-1296
[2]
AN ANALYTIC MODEL FOR HIGH-ELECTRON-MOBILITY TRANSISTORS
[J].
CHANG, CS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, Los, Angeles, CA, USA, Univ of California, Los Angeles, Los Angeles, CA, USA
CHANG, CS
;
FETTERMAN, HR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, Los, Angeles, CA, USA, Univ of California, Los Angeles, Los Angeles, CA, USA
FETTERMAN, HR
.
SOLID-STATE ELECTRONICS,
1987,
30
(05)
:485
-491
[3]
CHANG CS, 1987, IEEE T ELECTRON DEV, V34, P1456, DOI 10.1109/T-ED.1987.23106
[4]
TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS
[J].
COOK, RK
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
COOK, RK
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(06)
:970
-977
[5]
POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
[J].
FRENSLEY, WR
论文数:
0
引用数:
0
h-index:
0
FRENSLEY, WR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
:962
-970
[6]
CHANNEL CURRENT LIMITATIONS IN GAAS-MESFETS
[J].
FUKUI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
FUKUI, H
.
SOLID-STATE ELECTRONICS,
1979,
22
(05)
:507
-&
[7]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[8]
A NUMERICAL APPROACH TO MODELING THE ULTRASHORT-GATE MESFET
[J].
HIGGINS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
HIGGINS, JA
;
PATTANAYAK, DN
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
PATTANAYAK, DN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(02)
:179
-183
[9]
2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1353
-+
[10]
OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS
[J].
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
HOEFFLINGER, B
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
:971
-976
←
1
2
3
→
共 22 条
[1]
ELECTRON-DRIFT VELOCITY VERSUS ELECTRIC-FIELD IN GAAS
[J].
CHANG, CS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA
CHANG, CS
;
FETTERMAN, HR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA
FETTERMAN, HR
.
SOLID-STATE ELECTRONICS,
1986,
29
(12)
:1295
-1296
[2]
AN ANALYTIC MODEL FOR HIGH-ELECTRON-MOBILITY TRANSISTORS
[J].
CHANG, CS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, Los, Angeles, CA, USA, Univ of California, Los Angeles, Los Angeles, CA, USA
CHANG, CS
;
FETTERMAN, HR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of California, Los Angeles, Los, Angeles, CA, USA, Univ of California, Los Angeles, Los Angeles, CA, USA
FETTERMAN, HR
.
SOLID-STATE ELECTRONICS,
1987,
30
(05)
:485
-491
[3]
CHANG CS, 1987, IEEE T ELECTRON DEV, V34, P1456, DOI 10.1109/T-ED.1987.23106
[4]
TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS
[J].
COOK, RK
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
COOK, RK
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(06)
:970
-977
[5]
POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
[J].
FRENSLEY, WR
论文数:
0
引用数:
0
h-index:
0
FRENSLEY, WR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
:962
-970
[6]
CHANNEL CURRENT LIMITATIONS IN GAAS-MESFETS
[J].
FUKUI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
FUKUI, H
.
SOLID-STATE ELECTRONICS,
1979,
22
(05)
:507
-&
[7]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[8]
A NUMERICAL APPROACH TO MODELING THE ULTRASHORT-GATE MESFET
[J].
HIGGINS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
HIGGINS, JA
;
PATTANAYAK, DN
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803
PATTANAYAK, DN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(02)
:179
-183
[9]
2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
[J].
HIMSWORTH, B
论文数:
0
引用数:
0
h-index:
0
HIMSWORTH, B
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1353
-+
[10]
OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS
[J].
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
HOEFFLINGER, B
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
:971
-976
←
1
2
3
→