DEVICE IMPLICATIONS OF THE ELECTRONIC EFFECT IN THE ELASTIC-CONSTANTS OF SILICON

被引：12

作者：

KEYES, RW

机构：

来源：

IEEE TRANSACTIONS ON SONICS AND ULTRASONICS | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-SU.1982.31314

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

引用

页码：99 / 103

页数：5

共 23 条

[1]

ACHENBACH JD, 1973, WAVE PROPAGATION ELA, P218

[2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[3]

BIR GL, 1963, SOV PHYS-SOL STATE, V4, P1925

[4] ELECTRONIC EFFECT IN ELASTIC CONSTANTS OF GERMANIUM [J].

BRUNER, LJ ;

KEYES, RW .

PHYSICAL REVIEW LETTERS, 1961, 7 (02) :55-&

[5] EFFECT OF DOPING ON ELASTIC CONSTANTS OF SILICON [J].

CSAVINSZKY, P ;

EINSPRUCH, NG .

PHYSICAL REVIEW, 1963, 132 (06) :2434-&

[6] COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON [J].

DESHMUKH, VGI .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :649-651

[7] ELECTRONIC EFFECT IN THE ELASTIC CONSTANT C' OF SILICON [J].

EINSPRUCH, NG ;

CSAVINSZKY, P .

APPLIED PHYSICS LETTERS, 1963, 2 (01) :1-3

[8] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J].

HALL, JJ .

PHYSICAL REVIEW, 1967, 161 (03) :756-&

[9]

JAGGANATH C, 1980, B AM PHYS SOC, V25, P11

[10] ACOUSTIC MICROSCOPY - 1979 [J].

KESSLER, LW ;

YUHAS, DE .

PROCEEDINGS OF THE IEEE, 1979, 67 (04) :526-536

← 1 2 3 →