COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON

被引：6

作者：

DESHMUKH, VGI ^{[1
]}

机构：

[1] UNIV ST ANDREWS,SCH PHYS SCI,ST ANDREWS KY16 9ST,FIFE,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期

关键词：

D O I：

10.1080/01418637808226461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：649 / 651

页数：3

共 14 条

[1] MAGNETIC-PROPERTIES OF ELECTRONS AND HOLES IN METALLIC SI-P AND SI-B [J].

BROWN, GC ;

HOLCOMB, DF .

PHYSICAL REVIEW B, 1974, 10 (08) :3394-3401

[2]

DESHMUKH VGI, 1976, J PHYS C C, V4, P329

[3]

Friedman L., 1971, J NONCRYST SOLIDS, V6, P329

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[5] COEFFICIENT DE HALL ET RESISTIVITE DU GERMANIUM DOPE A LARSENIC EN FONCTION DE LA TEMPERATURE [J].

LEHIR, MJF .

JOURNAL DE PHYSIQUE, 1967, 28 (07) :563-&

[6] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J].

LI, SS ;

THURBER, WR .

SOLID-STATE ELECTRONICS, 1977, 20 (07) :609-616

[7]

Mott N. F., 1974, METAL INSULATOR TRAN

[8] DEGENERATE ELECTRON-GAS IN TUNGSTEN BRONZES AND IN HIGHLY DOPED SILICON [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :111-128

[9] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J].

MOUSTY, F ;

OSTOJA, P ;

PASSARI, L .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4576-4580

[10] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT [J].

QUIRT, JD ;

MARKO, JR .

PHYSICAL REVIEW B, 1973, 7 (08) :3842-3858

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